APTGT50H60RT3G APTGT50H60RT3G C rev 2 october, 2012 1-8 www.microsemi.com all ratings @ t j = 25c unless otherwise specified these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 7/24 ; 5/26 v ces = 600v i c = 50a @ tc = 80c application ? solar converter features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals both for power and signal for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant full bridge + rectifier bridge trench + field stop igbt3 power module downloaded from: http:///
APTGT50H60RT3G APTGT50H60RT3G C rev 2 october, 2012 2-8 www.microsemi.com 1. full bridge absolute maximum ratings (per igbt) symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 80 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 100 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa reverse bias safe operating area t j = 150c 100a @ 550v electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance 3150 c oes output capacitance 200 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 95 pf q g gate charge v ge =15v, i c =50a v ce =300v 0.5 c t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 60 ns t j = 25c 0.3 e on turn-on switching energy t j = 150c 0.43 mj t j = 25c 1.35 e off turn-off switching energy v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? t j = 150c 1.75 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 250 a r thjc junction to case thermal resistance 0.85 c/w downloaded from: http:///
APTGT50H60RT3G APTGT50H60RT3G C rev 2 october, 2012 3-8 www.microsemi.com reverse diode ratings and characteristics (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 50 a t j = 25c 1.6 2 v f diode forward voltage i f = 50a v ge = 0v t j = 150c 1.5 v t j = 25c 100 t rr reverse recovery time t j = 150c 150 ns t j = 25c 2.6 q rr reverse recovery charge t j = 150c 5.4 c t j = 25c 0.6 e rr reverse recovery energy i f = 50a v r = 300v di/dt =1800a/s t j = 150c 1.2 mj r thjc junction to case thermal resistance 1.42 c/w 2. rectifier bridge absolute maximum ratings (per diode) symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 600 v i f(av) maximum average forward current duty cycle = 50% t c = 80c 40 i fsm non-repetitive forward surge current 8.3ms t j = 45c 320 a electrical characteristics (per diode) symbol characteristic test conditions min typ max unit i f = 30a 1.8 2.2 i f = 60a 2.2 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a downloaded from: http:///
APTGT50H60RT3G APTGT50H60RT3G C rev 2 october, 2012 4-8 www.microsemi.com dynamic characteristics (per diode) symbol characteristic test conditions min typ max unit t rr reverse recovery time i f =1a,v r =30v di/dt = 100a/s t j = 25c 22 ns t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge t j = 125c 480 nc t j = 25c 3 i rrm reverse recovery current i f = 30a v r = 400v di/dt = 200a/s t j = 125c 6 a t rr reverse recovery time 85 ns q rr reverse recovery charge 920 c i rrm reverse recovery current i f = 30a v r = 400v di/dt = 1000a/s t j = 125c 20 a r thjc junction to case thermal resistance 1.2 c/w 3. thermal and package characteristics temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGT50H60RT3G APTGT50H60RT3G C rev 2 october, 2012 5-8 www.microsemi.com sp3 package outline (dimensions in mm) 4. typical full bridge performance curve (per igbt and parallel diode) forward characteristic of diode t j =25c t j =125c t j =150c 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2 2.4 v f (v) i f (a) hard switching zcs zvs 0 20 40 60 80 100 120 0 2 04 06 08 0 i c (a) fmax, operating frequency (khz) v ce =300v d=50% r g =8.2 ? t j =150c t c =85c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) diode downloaded from: http:///
APTGT50H60RT3G APTGT50H60RT3G C rev 2 october, 2012 6-8 www.microsemi.com output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 20 40 60 80 100 00.511.522.533.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 0.5 1 1.5 2 2.5 3 3.5 0 2 04 06 08 01 0 0 i c (a) e (mj) v ce = 300v v ge = 15v r g = 8.2 ? t j = 150c eon eon eoff err 0 0.5 1 1.5 2 2.5 3 5 152535455565 gate resistance (ohms) e (mj) v ce = 300v v ge =15v i c = 50a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =8.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) igbt downloaded from: http:///
APTGT50H60RT3G APTGT50H60RT3G C rev 2 october, 2012 7-8 www.microsemi.com 5. typical rectifier bridge performance curve (per diode) d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pu lse duration t j =25c t j =125c 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 15 a 30 a 60 a 0 5 10 15 20 25 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 15 a 30 a 60 a 50 75 100 125 150 175 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 15 a 30 a 60 a 0.0 0.5 1.0 1.5 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 25 50 75 100 125 150 175 200 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) downloaded from: http:///
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